GT50JR22 IGBT Silicon N-Channel 600V @ 50A
| Producto nº: | AD34493 |
| Tu precio: | US$7,10 |
| No. de artículos en existencia: | 0 |
| Disponibilidad: | Solicitado |
AGOTADO!!
Features:
- 6.5th generation
- The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip
- Enhancement mode
- High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A)
- Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)
- High junction temperature : Tj = 175 ºC (max)
Para más detalles ver hoja de datos: GT50JR22 Datasheet.pdf (206938)